Abstract Submission Guidelines

Call for Abstracts has been extended to 21 March!

Abstract submissions are welcome for consideration for the 18th IEEE International Conference on Nanotechnology, which will be held Cork, 23 – 27 July 2018.

Submitting an Abstract:

Abstracts (maximum 2 pages) can be submitted through the online submission portal for consideration as an oral or poster presentation at IEEE NANO 2018.

Authors of accepted manuscripts will have the option of submitting a full paper (4 pages) for inclusion in the Conference Proceedings. The proceedings of IEEE NANO 2018 will be available and indexed on the IEEE Xplore system.

There will also be a special section/issue of IEEE Transactions on Nanotechnology (TNANO) reflecting the scope of IEEE NANO 2018. Submitted manuscripts will undergo a full peer review process. All appropriate submissions are welcome and will not be limited to conference attendees.

Important Dates:

Call for abstracts Opens
1 December 2017

Abstract submission deadline (EXTENDED)
21 March 2018

Notification of Acceptance
April 2018

Deadline for accepted authors to register to confirm attendance
10 May 2018

Deadline for accepted authors to submit final paper

31 May 2018

Programme Available Online
June 2018

Publishing of Abstracts:

Accepted full papers will be published post-conference on IEEE Xplore system.

Selected papers are eligible for submission to the Special Issue of IEEE Transactions on Nanotechnology. Authors of these selected papers will be informed at a later date.

Submission Process

 

The abstract submission process for IEEE NANO 2018 will be through an online submission portal

Presenting Authors are requested to create an account and submit an abstract (maximum 2 pages using the template provided) for review according to the guidelines set out below. The same account will be used when you register for the conference. Please keep the email and password used to create the account for future use. Please do not create a new account. Should you require any assistance or have a query about online submission, contact ieeenano18@conferencepartners.ie.

IMPORTANT:

  • It is ESSENTIAL that you read the instructions below before you submit.
  • The Presenting Author must submit the abstract and is required to be the corresponding author for that abstract
  • Abstracts must be submitted in English
  • Authors of accepted abstracts are eligible tosubmit a full paper for inclusion in the Conference Proceedings by the date indicated in the notification email. The proceedings of IEEE NANO 2018 will be available and indexed on the IEEE Xplore
  • You do not need to register for the Conference prior to submitting an abstract however following acceptance into the programme you must register by 10 May 2018.

If you have an accepted abstract you are entitled to get the early bird registration rate up until the 10 May 2018. You will be provided with a link to register at this rate in your acceptance email. If you have any queries please contact ieeenano18@conferencepartners.ie. After this date any registrations made by you will be at the prevailing congress registration fee at time of registration/payment.

Tracks

Abstracts must be submitted under one of the conference tracks

1: Nanosensors & Nanoactuators

Nanoelectrochemical Sensors

Committee Members
Paul Bohn
(University of Notre Dame)
James Rohan (Tyndall National Institute)
Alan O’ Riordan (Tyndall National Institute)

  • The first session—“Nanoelectrochemistry: fundamentals, simulations and design”—will focus on the fundamental issues that underpin nanoscale electrochemistry that need to be considered when redeveloping new electroanalytical sensors. These considerations include (but are not limited to): material selection, sensor geometry, diffusion, fluidic dynamics, analysis time, background parasitics, sensor cross talk etc.
  • The second session—“Nanoelectrochemistry: devices, systems integration and applications”—will focus on development and fabrication of innovative free-standing and solid-state nanosensor devices, their system integration with, e.g., microfluidics, electronics, communications etc. and their subsequent electroanalytical applications.
Surface-enhanced Raman Spectroscopy
Piezoelectric Sensors & Actuators

Committee Members
Ulrich Schmid
(Wien, Austria)
Matteo Rinaldi (Northeastern, USA)
Nathan Jackson (University of New Mexico)

Confirmed Invited Presentations
Paul Muralt 
(EFPL, Switzerland)

  • This session will focus on the development and integration of piezoelectric materials in order to create novel transducers.
Biophotonics

Committee Members
Stefan Andersen-Engels
(Tyndall National Institute)

Confirmed Invited Presentations
Kishan Dholakia 
(University of St. Andrews, UK)

Materials Design & Development

2: Nanoenergy for Smart Things

Materials Design for Energy Harvesting & Storage

Committee Members
Ivana Savic (Tyndall National Institute)
Prof. Giulia Galli (University of Chicago, USA)
Prof. Mark Lundstrom
(Purdue University, USA)

Topics including but not limited to:

  • Materials for energy harvesting (thermoelectrics, photovoltaics, piezoelectrics)
  • Materials for energy storage (batteries and supercapacitors, hydrogen storage, carbon capture)
  • Predictive modelling techniques

Confirmed Invited Speakers
Prof. Giulia Galli (University of Chicago, USA)
Prof. Mark Lundstrom (Purdue University, USA)
Prof. Clas Persson (University of Oslo, Norway)
Prof. Berend Smit (Ecole Polytechnique Federale de Lausanne, Switzerland)
Dr. Nenad Vukmirovic (Institute of Physics Belgrade, Serbia)

Energy Harvesting & Conversion

Committee Members
Alan Mathewson
(Tyndall National Institute)
Saibal Roy (Tyndall National Institute)

Nanomaterials for Energy Storage

Committee Members
Micheál Burke
(Tyndall National Institute)
James Rohan (Tyndall National Institute)

  • This session within the Nanoenergy for Smart Things theme will cover recent developments in simulation, materials processing, electrode architectures and full cell analysis for lithium based and next generation energy storage materials. Abstracts describing the energy storage integration with energy harvesting for IoT applications are particularly welcome.

3: Materials, Devices & Architectures for Nanoelectronics

New Materials

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
New device architectures

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials & devices

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
Metrology solutions

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
Advanced processes for semiconductor devices

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
Modelling and TCAD for nanoelectronic materials and devices

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
Brain-Inspired Circuits & Architectures

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)
Topological Insulators

Committee Members
Jean-Pierre Colinge
(CEA/LETI, France)
Huamin Li (University of Buffalo, USA)
Yi Zhao (Zhejiang University, China)
Alejandro Linares-Barranco (University of Seville, Spain)
Alice Parker (University of Southern California, USA)
Martin Trefzer (University of York, UK)
Junxiu Liu (Ulster University, UK)
Jim Harkin (Ulster University, UK)
Liam McDaid (Ulster University, UK)
Stephan Menzel (Forschungszentrum Juelich, Germany)
Susanne Hoffman-Eifert (Juelich, Germany)
Farzan Gity (Tyndall National Institute)
Lida Ansari (Tyndall National Institute)
Ray Duffy (Tyndall National Institute)
Karim Cherkaoui (Tyndall National Institute)
Lynette Keeney (Tyndall National Institute)
Tuhin Maity (University of Cambridge)
Martyn Pemble (Tyndall National Institute)
Roger Whatmore (Imperial College London)

Confirmed Invited Presentations
Yann-Michel Niquet (CEA)
Gregor Mussler
(Juelich, Germany)
Bertrand Benoit
(CEA)
Jonathan Alaria (University of Liverpool)

Topics to include below and also the following:

  • New materials, including, but not limited to;
    Ge, SiGe, III-V, Transition Metal Dichalcogenides, Topological Insulators, Graphene.
  • New device architectures, including, but not limited to;
    FinFETs, GAA-FETs, thin-film FETs, Tunnel FETs, Nanowires, Nanotubes.
  • Advanced memory devices, Resistive Random Access Memories, Multi-Ferroic materials and devices.
  • Metrology solutions for the above.
  • Advanced processes for semiconductor devices.
  • Modelling and TCAD for nanoelectronic materials and devices.
  • Brain-Inspired Circuits & Architectures
  • Topological Insulators (focusing on the theoretical and experimental studies in relation to the material science, physics and applications of Topological Insulators)

4: Multi-scale Simulation

Enabling Multi-Scale Simulation, through theory and method development

Committee Members
Damien Thompson

Hannes Jonsson (Iceland)
Francesc Illas (Barcelona)
Geoffroy Hautier (UC Louvain)
Aron Walsh (Imperial)
Graeme Watson (TCD)
Michail Stamatakis (UCL)
Francesc Vines (Barcelona)
Stefan Bromley (Barcelona)
Fabio Sacconi (TiberLab, Italy)
Stephan Menzel (RWTH/FZJ)
Luca Larcher (MDLab)

Michael Nolan (Tyndall National Institute)

Confirmed Invited Presentations
Stefan Bromley (University of Barcelona)
Fabio Sacconi (TiberLab)
Stephan Menzel (Juelich, Germany)
Geoffroy Hautier (UC Louvain)
Graeme Watson (Trinity College Dublin)
Michail Stamatakis (UCL, UK)
Francesc Vines (University of Barcelona)
Luca Larcher (MDL Soft)

The Multi-Scale Simulation Track will focus on:

  • Enabling Multi-Scale Simulation, through theory and method development
  • Simulation of atomic layer deposition
  • Simulation of catalytic processes
  • Simulation of energy materials
  • Device simulation.

*Oral and Poster contributions in these and other areas of simulation are encouraged.

Simulation of atomic layer deposition

Committee Members
Damien Thompson

Hannes Jonsson (Iceland)
Francesc Illas (Barcelona)
Geoffroy Hautier (UC Louvain)
Aron Walsh (Imperial)
Graeme Watson (TCD)
Michail Stamatakis (UCL)
Francesc Vines (Barcelona)
Stefan Bromley (Barcelona)
Fabio Sacconi (TiberLab, Italy)
Stephan Menzel (RWTH/FZJ)
Luca Larcher (MDLab)

Michael Nolan (Tyndall National Institute)

Confirmed Invited Presentations
Stefan Bromley (University of Barcelona)
Fabio Sacconi (TiberLab)
Stephan Menzel (Juelich, Germany)
Geoffroy Hautier (UC Louvain)
Graeme Watson (Trinity College Dublin)
Michail Stamatakis (UCL, UK)
Francesc Vines (University of Barcelona)
Luca Larcher (MDL Soft)

The Multi-Scale Simulation Track will focus on:

  • Enabling Multi-Scale Simulation, through theory and method development
  • Simulation of atomic layer deposition
  • Simulation of catalytic processes
  • Simulation of energy materials
  • Device simulation.

*Oral and Poster contributions in these and other areas of simulation are encouraged.

Simulation of catalytic processes

Committee Members
Damien Thompson

Hannes Jonsson (Iceland)
Francesc Illas (Barcelona)
Geoffroy Hautier (UC Louvain)
Aron Walsh (Imperial)
Graeme Watson (TCD)
Michail Stamatakis (UCL)
Francesc Vines (Barcelona)
Stefan Bromley (Barcelona)
Fabio Sacconi (TiberLab, Italy)
Stephan Menzel (RWTH/FZJ)
Luca Larcher (MDLab)

Michael Nolan (Tyndall National Institute)

Confirmed Invited Presentations
Stefan Bromley (University of Barcelona)
Fabio Sacconi (TiberLab)
Stephan Menzel (Juelich, Germany)
Geoffroy Hautier (UC Louvain)
Graeme Watson (Trinity College Dublin)
Michail Stamatakis (UCL, UK)
Francesc Vines (University of Barcelona)
Luca Larcher (MDL Soft)

The Multi-Scale Simulation Track will focus on:

  • Enabling Multi-Scale Simulation, through theory and method development
  • Simulation of atomic layer deposition
  • Simulation of catalytic processes
  • Simulation of energy materials
  • Device simulation.

*Oral and Poster contributions in these and other areas of simulation are encouraged.

Simulation of energy materials

Committee Members
Damien Thompson

Hannes Jonsson (Iceland)
Francesc Illas (Barcelona)
Geoffroy Hautier (UC Louvain)
Aron Walsh (Imperial)
Graeme Watson (TCD)
Michail Stamatakis (UCL)
Francesc Vines (Barcelona)
Stefan Bromley (Barcelona)
Fabio Sacconi (TiberLab, Italy)
Stephan Menzel (RWTH/FZJ)
Luca Larcher (MDLab)

Michael Nolan (Tyndall National Institute)

Confirmed Invited Presentations
Stefan Bromley (University of Barcelona)
Fabio Sacconi (TiberLab)
Stephan Menzel (Juelich, Germany)
Geoffroy Hautier (UC Louvain)
Graeme Watson (Trinity College Dublin)
Michail Stamatakis (UCL, UK)
Francesc Vines (University of Barcelona)
Luca Larcher (MDL Soft)

The Multi-Scale Simulation Track will focus on:

  • Enabling Multi-Scale Simulation, through theory and method development
  • Simulation of atomic layer deposition
  • Simulation of catalytic processes
  • Simulation of energy materials
  • Device simulation.

*Oral and Poster contributions in these and other areas of simulation are encouraged.

Device simulation

Committee Members
Damien Thompson

Hannes Jonsson (Iceland)
Francesc Illas (Barcelona)
Geoffroy Hautier (UC Louvain)
Aron Walsh (Imperial)
Graeme Watson (TCD)
Michail Stamatakis (UCL)
Francesc Vines (Barcelona)
Stefan Bromley (Barcelona)
Fabio Sacconi (TiberLab, Italy)
Stephan Menzel (RWTH/FZJ)
Luca Larcher (MDLab)

Michael Nolan (Tyndall National Institute)

Confirmed Invited Presentations
Stefan Bromley (University of Barcelona)
Fabio Sacconi (TiberLab)
Stephan Menzel (Juelich, Germany)
Geoffroy Hautier (UC Louvain)
Graeme Watson (Trinity College Dublin)
Michail Stamatakis (UCL, UK)
Francesc Vines (University of Barcelona)
Luca Larcher (MDL Soft)

The Multi-Scale Simulation Track will focus on:

  • Enabling Multi-Scale Simulation, through theory and method development
  • Simulation of atomic layer deposition
  • Simulation of catalytic processes
  • Simulation of energy materials
  • Device simulation.

*Oral and Poster contributions in these and other areas of simulation are encouraged.

5: Nanofabrication & Assembly

Nanofabrication & Assembly

Committee Members
Liam O Faoileán (Cork Institute of Technology)
Andrea Di Falco (University of St Andrews, UK)
Marc Sorel (University of Glasgow, UK)
Tiziana Stomeo (Institute Italiano di Technologia-CBN, Italy)
Shankar K Selvaraja (Centre for Nano Science and Engineering in Indian Institute of Science, Bangalore, India)

  • Nanophotonics & Assembly is the study of the behavior of light on the nanometer scale, and of the interaction of nanometer-scale objects with light. The ability to control and manipulate light on the wavelength is a key task that will enable more efficient and compact devices. The tools of the micro-electronics industry are typically used giving high performance and scalable fabrication.

6: Nano-Acoustics

Nano-Acoustics

Committee Members
Dr. Sandy Cochran
(University of Glasgow, UK)
James Spicer (John Hopkins University, USA)
Xiaoning Jiang (North Carolina State University)
Lidai Wang (City University of Hong Kong)

This session will cover acoustic waves in nanofabrication, characterization of nanomaterials and nano-structures, and nano-materials in ultrasound sensing, imaging, drug delivery and therapy.

7: Nanophononics

Nanophononics

Committee Members

Clivia Sotomayer Torres ( Chair – Catalan Institute of Nanoscience and Nanotechnology)
Sebastian Volz (University of Tokyo)
Ivana Savic (Tyndall National Institute)

Topics including but not limited to:

  • Nanoscale heat transport phenomena
  • Phonon engineering and thermal circuits
  • Nanoscale thermal characterisation
  • Modelling of Nanoscale thermal transport

Confirmed Invited Presentations
Prof. Sebastian Volz (Ecole Centrale Paris, France and University of Tokyo, Japan)
Prof. Baowen Li (University of Colorado Boulder, USA)
Dr. Olivier Bourgeois (Institute Neel CNRS, Grenoble, France)
Prof. Masahiro Nomura (University of Tokyo, Japan)
Dr. Emigdio Chávez-Angel (ICN2 Catalan Institute of Nanoscience & Nanotechnology, Barcelona)
Prof. Jouni Ahopelto (VTT Technical Research Centre, Finland)
Dr. Bartlomiej Graczykowski (Max Planck Institute for Polymer Research, Mainz)
Prof. Davide Donadio (University of California Davis, USA)

8: Nanomagnetics & Spintronics

Nanomagnetics & Spintronics

Committee Members
Plamen Stamenov
(Trinity College Dublin)

9: Nanometrology

Nanometrology

10: Nanosafety

Nanosafety

Committee Members
Dimiter Prodanov
(IMEC)
Daniela Iacopino (Tyndall National Institute)

Nanosafety is a growing scientific field actively supported by the regulators and public funders. The aim of the session is to bring together toxicologists, safety professionals, material scientists and engineers to discuss the latest progress in their respective fields in view of the safety of novel advanced materials, as well as established industrial- scale processes. Contributions can include (but are not limited to), for example, risk assessment methodologies, process technology, toxicology.

11: Heritage Science

Heritage Science

Committee Members
Piero Baglioni
(University of Florence)
Rodorico Giorgi (University of Florence)
Daniela Iacopino (Tyndall National Institute)

This session will explore how advanced nanomaterials and new nano-devices aid cultural heritage conservation.

12: Nanoscale & Biological Communication

Nanoscale & Biological Communication

Committee Members
Andrew Eckford (York University, Toronto)

13: Nanophotonics & Nanoplasmonics

Nanophotonics & Nanoplasmonics

14: Nanomaterials

Nanomaterials

Submission Guidelines and Templates

Please adhere to the following formatting guidelines when preparing abstracts for submission for IEEE NANO 2018. Abstracts which are not correctly formatted will not be reviewed.

How to submit an abstract
The Presenting Author will be the contact person for the abstract and must submit the abstract. Once you enter the online submission portal, start by creating an Account. Please keep a record of the account details you use to set up the account as you will require them to log into both the IEEE NANO 2018 abstract submission system and Conference registration portals. Upon successful submission of the abstract a confirmation email will be sent to the Presenting Author.

If you have not received a confirmation email, please check that your abstract is not left in draft and is fully submitted by logging back into the portal and checking on the Edit Abstracts page.

A person may be associated with 2 papers and have 2 papers per registration as lead presenter.

IMPORTANT: Please note that you can save your submission as a draft and return to edit the submission, but once it has been submitted the abstract cannot be edited after the close of submission deadline. If you require any assistance regarding the submission of your abstract, contact ieeenano18@conferencepartners.ie.

Submission Process:
The online abstract submission system is a simple step by step process and will ask you to input the following details:

  • Title of the abstract (word limit is 15)
  • Presentation type (Oral or Poster)
  • Theme must be chosen from the theme list above
  • Name, affiliation, and job title of Presenting Author (this person will act as the main contact for this abstract; this person must be listed as the first author)
  • Name, affiliation, and job title of co-author(s)
  • The should be no more than 2 pages in total (including graphs, tables, text and anything else) 
  • Complete questions listed in Additional Information. Please provide the following information:
    • Keywords (max.5) that are relevant to your abstract
    • In order to help us compile statistics around equality and diversity across the conference programme, please indicate your gender
    • Indicate if you are a student
    • Should you think that your submission is covered by more than one track, please indicate a secondary track choice
  • Download the abstract template shown below to create the abstract as a Word document and then save as a Word file for uploading to the system. Only WORD files will be accepted for upload.

Authors of accepted manuscripts will have the option of submitting a full paper (4 pages) for inclusion in the Conference Proceedings by 31 May 2018. Guidelines will be provided in the acceptance notification. The proceedings of IEEE NANO 2018 will be available and indexed on the IEEE Xplore system.

Abstract Submission Template

Abstracts must be formatted using the IEEE NANO 2018 template. Abstracts can be submitted in English only. Click on the button to download the template.

Notification of Acceptance

Notification will be sent to the Presenting Author in April 2018.

When notified of acceptance, the Presenting Author is required to accept their offer by registering for the Conference by 10 May 2018. Failure to do so may result in the rejection of their abstract from the programme.

Terms and Conditions

  • The abstract submitted adheres to the abstract submission guidelines outlines above.
  • The text of the abstract along with the names and affiliations, poster, powerpoint presentations and/or additional documents as requested will be published on the conference website and book of abstracts, and that this will not raise any copyright issues.
  • This abstract has only been submitted once for IEEE NANO 2018.
  • A submission as a particular presentation type may be changed to a different type following review in order to be accepted and included in the programme.
  • Presenters may be recorded for live streaming. A recording of the presentation and a copy of the slides may be published online after the conference.
  • It is the responsibility of the Presenting Author to submit the abstract. They are the main contact whose responsibility it is to communicate with other co-authors and ensure that they register to be included in the programme.
  • Accepted authors must register by 10 May 2018 to confirm acceptance of their offer in the programme. If accepted authors are not registered by this date, they may be removed from the programme.
  • A person may be associated with 2 papers and have 2 papers per registration as lead presenter.
  • The abstract submitted is in English.
  • The Presenting Author is available to present at the conference on 23 – 27 July 2018.

If you have any queries regarding the above, please contact the IEEE NANO 2018 Programme Team ieeenano18@conferencepartners.ie

Important Dates

Call for abstracts
1 December 2017

Abstract submission deadline
21 March 2018

Notification of Acceptance
April 2018

End of early registration
10 May 2018

Deadline for final papers
31 May 2018

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© 2017-2018 Tyndall All rights reserved

© 2017-2018 Tyndall All rights reserved